標題: Investigation of Recessed Gate AlGaN/GaN MIS-HEMTs with Double AlGaN Barrier Designs toward an Enhancement-Mode Characteristic
作者: Wu, Tian-Li
Tang, Shun-Wei
Jiang, Hong-Jia
國際半導體學院
International College of Semiconductor Technology
關鍵字: GaN;metal-insulator-semiconductor high-electron-mobility transistor (MIS-HEMT);recessed gate;double barrier
公開日期: 1-二月-2020
摘要: In this work, recessed gate AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) with double AlGaN barrier designs are fabricated and investigated. Two different recessed depths are designed, leading to a 5 nm and a 3 nm remaining bottom AlGaN barrier under the gate region, and two different Al% (15% and 20%) in the bottom AlGaN barriers are designed. First of all, a double hump trans-conductance (g(m))-gate voltage (V-G) characteristic is observed in a recessed gate AlGaN/GaN MIS-HEMT with a 5 nm remaining bottom Al0.2Ga0.8N barrier under the gate region. Secondly, a physical model is proposed to explain this double channel characteristic by means of a formation of a top channel below the gate dielectric under a positive V-G. Finally, the impacts of Al% content (15% and 20%) in the bottom AlGaN barrier and 5 nm/3 nm remaining bottom AlGaN barriers under the gate region are studied in detail, indicating that lowering Al% content in the bottom can increase the threshold voltage (V-TH) toward an enhancement-mode characteristic.
URI: http://dx.doi.org/10.3390/mi11020163
http://hdl.handle.net/11536/154201
DOI: 10.3390/mi11020163
期刊: MICROMACHINES
Volume: 11
Issue: 2
起始頁: 0
結束頁: 0
顯示於類別:期刊論文