標題: | Gallium Nitride (GaN) High-Electron-Mobility Transistors with Thick Copper Metallization Featuring a Power Density of 8.2 W/mm for Ka-Band Applications |
作者: | Lin, Y. C. Chen, S. H. Lee, P. H. Lai, K. H. Huang, T. J. Chang, Edward Y. Hsu, Heng-Tung 材料科學與工程學系 電子工程學系及電子研究所 國際半導體學院 Department of Materials Science and Engineering Department of Electronics Engineering and Institute of Electronics International College of Semiconductor Technology |
關鍵字: | high-electron-mobility transistors;copper metallization;millimeter wave |
公開日期: | 1-二月-2020 |
摘要: | Copper-metallized gallium nitride (GaN) high-electron-mobility transistors (HEMTs) using a Ti/Pt/Ti diffusion barrier layer are fabricated and characterized for Ka-band applications. With a thick copper metallization layer of 6.8 mu m adopted, the device exhibited a high output power density of 8.2 W/mm and a power-added efficiency (PAE) of 26% at 38 GHz. Such superior performance is mainly attributed to the substantial reduction of the source and drain resistance of the device. In addition to improvement in the Radio Frequency (RF) performance, the successful integration of the thick copper metallization in the device technology further reduces the manufacturing cost, making it extremely promising for future fifth-generation mobile communication system applications at millimeter-wave frequencies. |
URI: | http://dx.doi.org/10.3390/mi11020222 http://hdl.handle.net/11536/154204 |
DOI: | 10.3390/mi11020222 |
期刊: | MICROMACHINES |
Volume: | 11 |
Issue: | 2 |
起始頁: | 0 |
結束頁: | 0 |
顯示於類別: | 期刊論文 |