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dc.contributor.authorWang, Shing-Chungen_US
dc.contributor.authorLu, Tien-Changen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.date.accessioned2014-12-08T15:21:42Z-
dc.date.available2014-12-08T15:21:42Z-
dc.date.issued2012en_US
dc.identifier.isbn978-0-81948-919-7en_US
dc.identifier.issn0277-786Xen_US
dc.identifier.urihttp://hdl.handle.net/11536/15420-
dc.identifier.urihttp://dx.doi.org/10.1117/12.907056en_US
dc.description.abstractThe current injection GaN-based vertical cavity surface emitting lasers with hybrid mirrors have demonstrated the CW operation at room temperature. The laser hybrid cavity composes of a 29-pair high-reflectivity AlN/GaN bottom DBR, a 7-lamda cavity region, and a 10-pair SiO2/Ta2O5 dielectric DBR. The laser structure has utilized a thin ITO layer of 30 nm as the transparent conducting layer, combining with a thin heavily doped p-type InGaN contact layer to reduce the optical loss while maintaining good current spreading capability. The laser has typical emission wavelength around 412 nm with a threshold current of about 9.7 mA at room temperature. Further details of the laser design and performance characteristics are described.en_US
dc.language.isoen_USen_US
dc.subjectvertical cavity surface emitting lasers (VCSEL)en_US
dc.subjectGaNen_US
dc.subjectDistributed Bragg Reflectorsen_US
dc.titleRecent advances on CW current injection blue VCSELsen_US
dc.typeProceedings Paperen_US
dc.identifier.doi10.1117/12.907056en_US
dc.identifier.journalVERTICAL-CAVITY SURFACE-EMITTING LASERS XVIen_US
dc.citation.volume8276en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000300250900007-
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