Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Chen, Y. F. | en_US |
dc.contributor.author | Chen, K. Y. | en_US |
dc.contributor.author | Liu, Y. C. | en_US |
dc.contributor.author | Chen, C. M. | en_US |
dc.contributor.author | Tsou, C. H. | en_US |
dc.contributor.author | Liang, H. C. | en_US |
dc.date.accessioned | 2020-05-05T00:02:26Z | - |
dc.date.available | 2020-05-05T00:02:26Z | - |
dc.date.issued | 2020-04-01 | en_US |
dc.identifier.issn | 0146-9592 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1364/OL.390991 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/154250 | - |
dc.description.abstract | The criterion for optimizing the high-power acousto-optically Q-switched self-Raman yellow laser is originally explored for the repetition rate within 100-500 kHz. The minimum allowed value for the gate-open time is experimentally verified to be determined by the pulse buildup time. By using the minimum allowed gate-open time, the highest conversion efficiency can be achieved to raise the output power by approximately 20% in comparison with the conventional results. At a repetition rate of 200 kHz, the maximum output power at 588 nm can be up to 8.8 W at an incident pump power of 26 W. Furthermore, a practical formula is developed to accurately calculate the threshold pump power as a function of the gate-open time for a given repetition rate. (C) 2020 Optical Society of America | en_US |
dc.language.iso | en_US | en_US |
dc.title | Criterion for optimizing high-power acousto-optically Q-switched self-Raman yellow lasers with repetition rates up to 500 kHz | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1364/OL.390991 | en_US |
dc.identifier.journal | OPTICS LETTERS | en_US |
dc.citation.volume | 45 | en_US |
dc.citation.issue | 7 | en_US |
dc.citation.spage | 1922 | en_US |
dc.citation.epage | 1925 | en_US |
dc.contributor.department | 交大名義發表 | zh_TW |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | National Chiao Tung University | en_US |
dc.contributor.department | Department of Electrophysics | en_US |
dc.identifier.wosnumber | WOS:000522794100083 | en_US |
dc.citation.woscount | 0 | en_US |
Appears in Collections: | Articles |