Full metadata record
DC FieldValueLanguage
dc.contributor.authorLu, Li-Syuanen_US
dc.contributor.authorChen, Guan-Haoen_US
dc.contributor.authorCheng, Hui-Yuen_US
dc.contributor.authorChuu, Chih-Piaoen_US
dc.contributor.authorLu, Kuan-Chengen_US
dc.contributor.authorChen, Chia-Haoen_US
dc.contributor.authorLu, Ming-Yenen_US
dc.contributor.authorChuang, Tzu-Hungen_US
dc.contributor.authorWei, Der-Hsinen_US
dc.contributor.authorChueh, Wei-Chenen_US
dc.contributor.authorJian, Wen-Binen_US
dc.contributor.authorLi, Ming-Yangen_US
dc.contributor.authorChang, Yu-Mingen_US
dc.contributor.authorLi, Lain-Jongen_US
dc.contributor.authorChang, Wen-Haoen_US
dc.date.accessioned2020-07-01T05:21:13Z-
dc.date.available2020-07-01T05:21:13Z-
dc.date.issued2020-04-28en_US
dc.identifier.issn1936-0851en_US
dc.identifier.urihttp://dx.doi.org/10.1021/acsnano.0c01139en_US
dc.identifier.urihttp://hdl.handle.net/11536/154299-
dc.description.abstractPalladium diselenide (PdSe2), a peculiar noble metal dichalcogenide, has emerged as a new two-dimensional material with high predicted carrier mobility and a widely tunable band gap for device applications. The inherent in-plane anisotropy endowed by the pentagonal structure further renders PdSe2 promising for novel electronic, photonic, and thermoelectric applications. However, the direct synthesis of few-layer PdSe2 is still challenging and rarely reported. Here, we demonstrate that few-layer, single-crystal PdSe2 flakes can be synthesized at a relatively low growth temperature (300 degrees C) on sapphire substrates using low-pressure chemical vapor deposition (CVD). The well-defined rectangular domain shape and precisely determined layer number of the CVD-grown PdSe2 enable us to investigate their layer-dependent and in-plane anisotropic properties. The experimentally determined layer-dependent band gap shrinkage combined with first-principle calculations suggest that the interlayer interaction is weaker in few-layer PdSe2 in comparison with that in bulk crystals. Field-effect transistors based on the CVD-grown PdSe2 also show performances comparable to those based on exfoliated samples. The low-temperature synthesis method reported here provides a feasible approach to fabricate high-quality few-layer PdSe2 for device applications.en_US
dc.language.isoen_USen_US
dc.subjecttwo-dimensional materialsen_US
dc.subjecttransition metal dichalcogenidesen_US
dc.subjectpalladium diselenideen_US
dc.subjectPdSe2en_US
dc.subjectchemical vapor depositionen_US
dc.subjectCVDen_US
dc.titleLayer-Dependent and In-Plane Anisotropic Properties of Low-Temperature Synthesized Few-Layer PdSe2 Single Crystalsen_US
dc.typeArticleen_US
dc.identifier.doi10.1021/acsnano.0c01139en_US
dc.identifier.journalACS NANOen_US
dc.citation.volume14en_US
dc.citation.issue4en_US
dc.citation.spage4963en_US
dc.citation.epage4972en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000529895500111en_US
dc.citation.woscount0en_US
Appears in Collections:Articles