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dc.contributor.authorFitriyah, Nurulen_US
dc.contributor.authorHong, Ten-Heren_US
dc.contributor.authorDuy, Ha Thaien_US
dc.contributor.authorMi, Juinn-Weien_US
dc.contributor.authorHsiao, Yen-Fuen_US
dc.contributor.authorJuang, Jenh-Yihen_US
dc.date.accessioned2020-07-01T05:21:13Z-
dc.date.available2020-07-01T05:21:13Z-
dc.date.issued2020-01-01en_US
dc.identifier.issn1662-5250en_US
dc.identifier.urihttp://dx.doi.org/10.4028/www.scientific.net/JNanoR.62.8en_US
dc.identifier.urihttp://hdl.handle.net/11536/154304-
dc.description.abstractOwing to its simple crystal structure, tetragonal FeSe has been considered as a perfect candidate for investigating the interplays among the superconductivity, magnetism and structural phase transition. Previous works had revealed that superconductivity could only be seen in samples with Se deficiency for the otherwise ferromagnetic tetragonal FeSe. In this study, we investigated the effect of vapor transport annealing on the crystalline quality of FeSe films deposited on flexible muscovite (mica) substrates by pulsed laser deposition. The annealing processes were conducted by sealing FeSe powder in tandem with the as-deposited FeSe films in a quartz tube. The FeSe powder was placed at a distance of about 18.5 cm from the FeSe films and the entire sealed quartz tube (about 1.2 cm in diameter) assembly was put into a Lindberg three-zone furnace and maintained a temperature gradient between the two ends of the quartz tube. The results showed that FeSe films successfully grown on flexible mica substrates and the annealing did improve the morphology and crystallinity of the films, however, the films appeared to have more inhomogeneous phases. We suspect that this might be due to uncompleted FeSe phase nucleation in non-optimum condition. The interface between the muscovite substrate and the FeSe films also could be the caused of the formation of other impurity phases, such as FeSe2 and Fe3Se4. Consequently, the obtained films exhibited only paramagnetic behaviors, and there was no sign of zero-resistance down to 2 K.en_US
dc.language.isoen_USen_US
dc.subjectFeSe filmsen_US
dc.subjectmuscoviteen_US
dc.subjectquartz tubeen_US
dc.subjecttetragonal FeSeen_US
dc.subjectvapor transport annealingen_US
dc.titleThe Effect of Vapor Transport Annealing on FeSe Films Deposited on 2D Materialen_US
dc.typeArticleen_US
dc.identifier.doi10.4028/www.scientific.net/JNanoR.62.8en_US
dc.identifier.journalJOURNAL OF NANO RESEARCHen_US
dc.citation.volume62en_US
dc.citation.spage8en_US
dc.citation.epage20en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000530041400002en_US
dc.citation.woscount0en_US
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