標題: ZrN-Based Flexible Resistive Switching Memory
作者: Kumar, Dayanand
Chand, Umesh
Siang, Lew Wen
Tseng, Tseung-Yuen
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Tin;Switches;Nitrogen;Electrodes;Random access memory;RRAM;nitrogen ions;conductive filament;resistive switching
公開日期: 1-May-2020
摘要: In this letter, ZrN-based resistive random access memory (RRAM) is investigated for flexible memory applications for the near future. Due to the room-temperature fabrication process, the device is suitable for low-temperature flexible monolithic technologies. The TiN/ZrN/TiN device exhibits excellent AC endurance cycling (10(7)), a rapid speed (45 ns) and stable retention (10(4) s) at 100 degrees C without any degradation. In addition, RRAM devices built with an additional HfN interface layer exhibit small operational voltage variations and stable switching characteristics. The flexibility of the device is excellent, and it maintains excellent electrical characteristics at a bending radius of up to 4 mm.
URI: http://dx.doi.org/10.1109/LED.2020.2981529
http://hdl.handle.net/11536/154312
ISSN: 0741-3106
DOI: 10.1109/LED.2020.2981529
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 41
Issue: 5
起始頁: 705
結束頁: 708
Appears in Collections:Articles