標題: Role of tungsten dopants in indium oxide thin-film transistor on radiation hardness technology
作者: Ruan, Dun-Bao
Liu, Po-Tsun
Gan, Kai-Jhih
Chiu, Yu-Chuan
Hsu, Chih-Chieh
Sze, Simon M.
電子工程學系及電子研究所
光電工程學系
光電工程研究所
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
Institute of EO Enginerring
公開日期: 4-May-2020
摘要: The effects of radiation on tungsten doped indium oxide (IWO) thin-film transistors (TFTs) have been well investigated in this Letter. In order to achieve high stability and excellent electrical performance simultaneously even in high ionizing radiation damage ambient, different concentrations of tungsten dopant have been introduced for the TFT device fabrication. It is interesting that the high energy ionizing radiation may significantly increase the conductivity and influence the total concentration of oxygen vacancy in the transparent amorphous oxide semiconductor material, which may be completely different from the traditional radiation damage effect for silicon based CMOS devices. However, that abnormal phenomenon will be effectively suppressed by the powerful carrier suppressor, tungsten, which may have a high oxygen bond dissociation energy. Therefore, IWO devices with a 4% tungsten oxide dopant might be the optimized result even after high dosage ionizing radiation exposure. Hence, it may provide a promising radiation hardness approach to improve both the electrical characteristics and reliability for next generation displays, which can be used in the control system of nuclear power generation or space technology.
URI: http://dx.doi.org/10.1063/1.5142557
http://hdl.handle.net/11536/154349
ISSN: 0003-6951
DOI: 10.1063/1.5142557
期刊: APPLIED PHYSICS LETTERS
Volume: 116
Issue: 18
起始頁: 0
結束頁: 0
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