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dc.contributor.authorChiang, Chen-Haoen_US
dc.contributor.authorChang, You-Chengen_US
dc.contributor.authorWu, Yue-Hanen_US
dc.contributor.authorHsieh, Meng-Chienen_US
dc.contributor.authorYang, Cheng-Hongen_US
dc.contributor.authorWang, Jia-Fengen_US
dc.contributor.authorChang, Lien_US
dc.contributor.authorChen, Jenn-Fangen_US
dc.date.accessioned2014-12-08T15:21:43Z-
dc.date.available2014-12-08T15:21:43Z-
dc.date.issued2011en_US
dc.identifier.isbn978-0-7354-1002-2en_US
dc.identifier.issn0094-243Xen_US
dc.identifier.urihttp://hdl.handle.net/11536/15434-
dc.identifier.urihttp://dx.doi.org/10.1063/1.3666480en_US
dc.description.abstractPhotoluminescence (PL) properties of the strain relaxed InAs quantum dots (QDs) are studied as a function of temperature from 10 to 300 K. Two groups of QDs induced by strain relaxation are observed in the PL spectra. The PL peak position of the relaxed (non-relaxed) QDs locates at a higher (lower) energy. TEM image prove QDs are distributed into two groups and indicate the QDs relax the strain by diffusing indium to GaAs. In the 120- 200 K temperature range, there are abnormal temperature behaviors attributed to the carrier transfer from the relaxed to non-relaxed QDs.en_US
dc.language.isoen_USen_US
dc.subjectInAs quantum doten_US
dc.subjectMolecular beam epitaxyen_US
dc.subjectInterdot carrier transferen_US
dc.subjectTEM Analysisen_US
dc.subjectBimodal distributionsen_US
dc.titlePhotoluminescence Study of Interdot Carrier Transfer on Strain-relaxed InAs Quantum Dotsen_US
dc.typeProceedings Paperen_US
dc.identifier.doi10.1063/1.3666480en_US
dc.identifier.journalPHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORSen_US
dc.citation.volume1399en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000301053000241-
Appears in Collections:Conferences Paper


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