標題: Photoluminescence Study of Interdot Carrier Transfer on Strain-relaxed InAs Quantum Dots
作者: Chiang, Chen-Hao
Chang, You-Cheng
Wu, Yue-Han
Hsieh, Meng-Chien
Yang, Cheng-Hong
Wang, Jia-Feng
Chang, Li
Chen, Jenn-Fang
電子物理學系
Department of Electrophysics
關鍵字: InAs quantum dot;Molecular beam epitaxy;Interdot carrier transfer;TEM Analysis;Bimodal distributions
公開日期: 2011
摘要: Photoluminescence (PL) properties of the strain relaxed InAs quantum dots (QDs) are studied as a function of temperature from 10 to 300 K. Two groups of QDs induced by strain relaxation are observed in the PL spectra. The PL peak position of the relaxed (non-relaxed) QDs locates at a higher (lower) energy. TEM image prove QDs are distributed into two groups and indicate the QDs relax the strain by diffusing indium to GaAs. In the 120- 200 K temperature range, there are abnormal temperature behaviors attributed to the carrier transfer from the relaxed to non-relaxed QDs.
URI: http://hdl.handle.net/11536/15434
http://dx.doi.org/10.1063/1.3666480
ISBN: 978-0-7354-1002-2
ISSN: 0094-243X
DOI: 10.1063/1.3666480
期刊: PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS
Volume: 1399
Appears in Collections:Conferences Paper