標題: Incorporation of Resistive Random Access Memory into Low-Temperature Polysilicon Transistor with Fin-Like Structure as 1T1R Device
作者: Huang, Wei-Chen
Zheng, Hao-Xuan
Chen, Po-Hsun
Chang, Ting-Chang
Tan, Yung-Fang
Lin, Shih-Kai
Zhang, Yong-Ci
Jin, Fu-Yuan
Wu, Chung-Wei
Yeh, Yu-Hsuan
Chou, Sheng-Yao
Huang, Hui-Chun
Chen, Yan-Wen
Sze, Simon M.
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: fabrication;fin-like low-temperature polysilicon (LTPS);resistive random access memory (RRAM)
公開日期: 1-Jan-1970
摘要: In this study, a one transistor one resistor (1T1R) structure combining a fin-like low-temperature polycrystalline-silicon (LTPS) transistor and a resistive random access memory (RRAM) is successfully fabricated. For the fin-like LTPS transistor, both n-type and p-types show excellent electrical output characteristics. Fin-like structure produces more stable output characteristics. Also, the forming and current-voltage (I-V) characteristics are measured in this study, and the RRAM exhibits a forming voltage of about -1.9 V. As for the I-V switching property, the devices are stable and show excellent performance, with the set and reset voltages showing only minimal change over 100 cycles. Moreover, combining the fin-like LTPS transistor and RRAM into a 1T1R structure results in favorable operation over 100 cycles, with excellent retention and endurance. According to these results, RRAM can be successfully combined with a fin-like LTPS transistor for application in current integrated circuit processes without difficulty.
URI: http://dx.doi.org/10.1002/aelm.202000066
http://hdl.handle.net/11536/154402
ISSN: 2199-160X
DOI: 10.1002/aelm.202000066
期刊: ADVANCED ELECTRONIC MATERIALS
起始頁: 0
結束頁: 0
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