Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Tsai, Yi-Lin | en_US |
| dc.contributor.author | Wang, Shou-Wei | en_US |
| dc.contributor.author | Huang, Huang-Hsiung | en_US |
| dc.contributor.author | Shih, Hsiang-Yun | en_US |
| dc.contributor.author | Lu, Po-Yen | en_US |
| dc.contributor.author | Lin, Wei | en_US |
| dc.contributor.author | Lin, Chien-chung | en_US |
| dc.date.accessioned | 2020-07-01T05:21:21Z | - |
| dc.date.available | 2020-07-01T05:21:21Z | - |
| dc.date.issued | 2020-05-01 | en_US |
| dc.identifier.issn | 1041-1135 | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/LPT.2020.2983582 | en_US |
| dc.identifier.uri | http://hdl.handle.net/11536/154427 | - |
| dc.description.abstract | In this study, Fabry-Perot quantum well lasers with shortened cavity designs (25 and 50 mu m) were fabricated. The devices had dry-etched and cleaved facets and exhibited an output power of up to 2.36 mW for a cavity length of 25 mu m; good spectral performance was achieved. Single-optical-mode operation with better than 25dB of side mode suppression ratio can be achieved for the fabricated devices with 25- and 50-mu m cavities. The short-cavity devices also exhibited highspeed modulation at elevated temperatures. Moreover, 25 Gb/s eye diagrams could be obtained at 65oC for the 25 mu m device and 55oC for the 50 mu m device. Due to their small area, ultra-shortcavity Fabry-Perot laser can be suitably used in next-generation light sources for optical communication. | en_US |
| dc.language.iso | en_US | en_US |
| dc.subject | Amplitude modulation | en_US |
| dc.subject | diode lasers | en_US |
| dc.subject | laser cavity resonators | en_US |
| dc.subject | laser modes | en_US |
| dc.subject | optical device fabrication | en_US |
| dc.subject | quantum well lasers | en_US |
| dc.subject | semiconductor lasers | en_US |
| dc.title | High Speed Directly Modulated Fabry-Perot Lasers With an Ultra-Short Cavity Length | en_US |
| dc.type | Article | en_US |
| dc.identifier.doi | 10.1109/LPT.2020.2983582 | en_US |
| dc.identifier.journal | IEEE PHOTONICS TECHNOLOGY LETTERS | en_US |
| dc.citation.volume | 32 | en_US |
| dc.citation.issue | 9 | en_US |
| dc.citation.spage | 534 | en_US |
| dc.citation.epage | 537 | en_US |
| dc.contributor.department | 光電系統研究所 | zh_TW |
| dc.contributor.department | Institute of Photonic System | en_US |
| dc.identifier.wosnumber | WOS:000528591700003 | en_US |
| dc.citation.woscount | 0 | en_US |
| Appears in Collections: | Articles | |

