標題: Intriguing field-effect-transistor performance of two-dimensional layered and crystalline CrI3
作者: Patil, Ranjit A.
Tu, Hao-Wei
Jen, Ming-Hsing
Lin, Jing-Jia
Wu, Ching-Cherng
Yang, Chun-Chuen
Duy Van Pham
Tsai, Chih-Hung
Lai, Chien-Chih
Liou, Yung
Jian, Wen-Bin
Ma, Yuan-Ron
電子物理學系
Department of Electrophysics
關鍵字: Chromium triiodide;Two-dimensional materials;Large-area;Field effect transistors
公開日期: 1-Mar-2020
摘要: There are many candidate materials that can be used as channel materials for the next-generation field effect transistors (FETs). CrI3 is one of the particular candidates for application in FET, because it is a two-dimensional (2D) ferromagnet and has giant tunneling magnetoresistance. The ferromagnetic nature extends to not only electronics but also spintronics. In this study, the large-area, layered, and crystalline 2D CrI3 were synthesized by horizontal Bridgman method. The suspended CrI3 FETs were fabricated for explorations of intrinsic electron transport in the CrI3 channel and of electrical contact problems. The suspended FET structure lets the CrI3 channel free from trapping charges in the SiO2-capped Si substrate. The oneoff ratio of the suspended CrI3 FET is up to 10(4), making the 2D layered CrI3 potential for future FETs. The investigations of the mobility and the interface-trap density at various temperatures reveal that the trapping charges as well as the interface-trap densities are increased with further gas adsorption on the surface of the CrI3 flake. The performance of the suspended CrI3 FET can be improved, if the gas adsorption problem can be carefully treated. (c) 2020 Elsevier Ltd. All rights reserved.
URI: http://dx.doi.org/10.1016/j.mtphys.2019.100174
http://hdl.handle.net/11536/154438
ISSN: 2542-5293
DOI: 10.1016/j.mtphys.2019.100174
期刊: MATERIALS TODAY PHYSICS
Volume: 12
起始頁: 0
結束頁: 0
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