標題: A Volatile RRAM Synapse for Neuromorphic Computing
作者: Covi, E.
Lin, Y. -H.
Wang, W.
Stecconi, T.
Milo, V.
Bricalli, A.
Ambrosi, E.
Pedretti, G.
Tseng, T. -Y.
Ielmini, D.
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Resistive switching memory (RRAM);volatile switching;short-term plasticity (STP);short-term memory (STM)
公開日期: 1-一月-2019
摘要: Neuromorphic computing has emerged as a promising approach for autonomous systems able to learn, adapt, and interact in real time with the environment. To build neuromorphic hardware, the recent development of novel material-based devices such as resistive switching memory (RRAM) has shown to be crucial since this class of devices offers the unique advantage to implement neuron and synaptic functions in silico by device physics, thus avoiding bulky circuits and very complex algorithms. In this work, we first explore volatile switching behaviour of RRAM devices, investigating their ability to capture short-term plasticity (STP) and short-term memory (STM) functionalities. Then, we characterise a volatile RRAM synapse, discussing its potential use in a spiking neural network for speech recognition applications.
URI: http://hdl.handle.net/11536/154466
ISBN: 978-1-7281-0996-1
期刊: 2019 26TH IEEE INTERNATIONAL CONFERENCE ON ELECTRONICS, CIRCUITS AND SYSTEMS (ICECS)
起始頁: 903
結束頁: 906
顯示於類別:會議論文