完整後設資料紀錄
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dc.contributor.authorPan, Ci-Lingen_US
dc.contributor.authorChen, Kuan-Wenen_US
dc.contributor.authorWang, Yi-Chaoen_US
dc.contributor.authorKao, Shih-Hsuanen_US
dc.contributor.authorWu, Pohsunen_US
dc.date.accessioned2020-07-01T05:22:04Z-
dc.date.available2020-07-01T05:22:04Z-
dc.date.issued2020-05-01en_US
dc.identifier.urihttp://dx.doi.org/10.1063/5.0001308en_US
dc.identifier.urihttp://hdl.handle.net/11536/154491-
dc.description.abstractNear ultraviolet (lambda approximate to 400 nm) femtosecond laser annealing (400 nm-FLA) in a scanning mode was employed to crystallize amorphous silicon (a-Si) films at room temperature. The average grain size of polycrystalline silicon annealed was studied as a function of the incident laser fluence and beam overlap or the number of laser shots irradiated. In general, the grain size can be enlarged by either increasing the beam overlap at a fixed laser fluence or increasing the laser fluence for a fixed number of laser shots. An apparent threshold for the onset of rapid enlargement of grain size was observed for processing at similar to 90% overlap and fluences above 25 mJ/cm(2). A maximum grain size of similar to 280 nm was attained at a laser fluence of 30 mJ/cm(2) and overlap of 93.75%, beyond which the grain size attained was smaller, and eventually, ablation was observed at an overlap of 97.5% and higher. These trends and observed surface morphology of annealed samples suggest that the crystallization mechanism is like sequential lateral solidification, similar to 800 nm-FLA and excimer laser annealing. Raman spectroscopic studies show that the degree of crystallization achieved with 400 nm-FLA is even higher than that of 800 nm-FLA. Cross-sectional scanning electron microscopic images indicate that the 100 nm-thick a-Si film is not fully crystallized. This can be explained by the much shorter penetration depth of 400 nm light than that of 800 nm light in a-Si.en_US
dc.language.isoen_USen_US
dc.titleRoom-temperature crystallization of amorphous silicon by near-UV femtosecond pulsesen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/5.0001308en_US
dc.identifier.journalAIP ADVANCESen_US
dc.citation.volume10en_US
dc.citation.issue5en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department光電工程研究所zh_TW
dc.contributor.departmentInstitute of EO Enginerringen_US
dc.identifier.wosnumberWOS:000537826300001en_US
dc.citation.woscount0en_US
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