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dc.contributor.authorNagarajan, Venkatesanen_US
dc.contributor.authorChen, Kun-Mingen_US
dc.contributor.authorLin, Hsin-Yien_US
dc.contributor.authorHu, Hsin-Huien_US
dc.contributor.authorHuang, Guo-Weien_US
dc.contributor.authorLin, Chuang-Juen_US
dc.contributor.authorChen, Bo-Yuanen_US
dc.contributor.authorAnandan, Deepaken_US
dc.contributor.authorSingh, Sankalp Kumaren_US
dc.contributor.authorWu, Chai-Hsunen_US
dc.contributor.authorChang, Edward Yien_US
dc.date.accessioned2020-07-01T05:22:04Z-
dc.date.available2020-07-01T05:22:04Z-
dc.date.issued2020-01-01en_US
dc.identifier.issn1536-125Xen_US
dc.identifier.urihttp://dx.doi.org/10.1109/TNANO.2020.2992732en_US
dc.identifier.urihttp://hdl.handle.net/11536/154493-
dc.description.abstractThe low-frequency noise characteristics of AlGaN & x002F;GaN HEMTs and MIS-HEMTs are investigated in the dark condition and under UV illumination. The test devices with a 3-& x03BC;m-thick GaN buffer and a 25-nm-thick Al<sub>0.22</sub>Ga<sub>0.78</sub>N barrier layer were fabricated on the silicon wafer. For MIS-HEMTs, a 25-nm-thick SiN layer was deposited as a gate dielectric. The measured low-frequency noises show a 1 & x002F;f spectrum and can be described by the carrier number fluctuation model. Different noise responses to the UV light between HEMTs and MIS-HEMTs were observed. By comparing the noise data in dark and under UV illumination, the noise sources under the gate and in the ungated gate-drain access region have been identified. From these results, we can find a design guideline to improve the noise and reliability of GaN-based devices for optoelectronic applications.en_US
dc.language.isoen_USen_US
dc.subjectHEMTsen_US
dc.subjectMODFETsen_US
dc.subjectLogic gatesen_US
dc.subjectAluminum gallium nitrideen_US
dc.subjectWide band gap semiconductorsen_US
dc.subjectGallium nitrideen_US
dc.subjectLow-frequency noiseen_US
dc.subjectGaNen_US
dc.subjectHEMTen_US
dc.subjectlow-frequency noiseen_US
dc.subjectoptoelec- tronicen_US
dc.subjectUV illuminationen_US
dc.titleLow-Frequency Noise Characterization of AlGaN & x002F;GaN HEMTs and MIS-HEMTs Under UV Illuminationen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TNANO.2020.2992732en_US
dc.identifier.journalIEEE TRANSACTIONS ON NANOTECHNOLOGYen_US
dc.citation.volume19en_US
dc.citation.spage405en_US
dc.citation.epage409en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000538020700006en_US
dc.citation.woscount0en_US
Appears in Collections:Articles