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dc.contributor.authorChen, Kuan-Juen_US
dc.contributor.authorWu, John A.en_US
dc.contributor.authorChen, Chihen_US
dc.date.accessioned2020-07-01T05:22:06Z-
dc.date.available2020-07-01T05:22:06Z-
dc.date.issued2020-06-03en_US
dc.identifier.issn1528-7483en_US
dc.identifier.urihttp://dx.doi.org/10.1021/acs.cgd.0c00142en_US
dc.identifier.urihttp://hdl.handle.net/11536/154513-
dc.description.abstractNanotwinned copper (nt-Cu) has been attracting a great deal of attention in the past decades due to its excellent mechanical and electrical properties. In this study, a new approach, periodic-reverse (PR) waveforms, is adopted to electroplate nt-Cu films with highly < 111 >-oriented columnar grain microstructures. We investigate the effect of the reverse current on the microstructures of < 111 >--oriented nt-Cu films and their grain growth behavior. With proper reverse current parameters, we are able to obtain a nt-Cu film with a significantly thin transition layer, low amount of impurities, and low residual stress levels in comparison to a DC electroplated film. It is also discovered that the grain size after annealing of the nt-Cu film is related to its initial columnar grain microstructures, which can be tailored by the reverse current parameter. These results show that PR electroplating provides a promising approach in improving and controlling the microstructures and properties of nt-Cu films.en_US
dc.language.isoen_USen_US
dc.titleEffect of Reverse Currents during Electroplating on the < 111 >-Oriented and Nanotwinned Columnar Grain Growth of Copper Filmsen_US
dc.typeArticleen_US
dc.identifier.doi10.1021/acs.cgd.0c00142en_US
dc.identifier.journalCRYSTAL GROWTH & DESIGNen_US
dc.citation.volume20en_US
dc.citation.issue6en_US
dc.citation.spage3834en_US
dc.citation.epage3841en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000538515500031en_US
dc.citation.woscount0en_US
Appears in Collections:Articles