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dc.contributor.authorLi, Yaolongen_US
dc.contributor.authorLiu, Weien_US
dc.contributor.authorWang, Yunkunen_US
dc.contributor.authorXue, Zhaohangen_US
dc.contributor.authorLeng, Yu-Chenen_US
dc.contributor.authorHu, Aiqinen_US
dc.contributor.authorYang, Hongen_US
dc.contributor.authorTan, Ping-Hengen_US
dc.contributor.authorLiu, Yunquanen_US
dc.contributor.authorMisawa, Hiroakien_US
dc.contributor.authorSun, Quanen_US
dc.contributor.authorGao, Yunanen_US
dc.contributor.authorHu, Xiaoyongen_US
dc.contributor.authorGong, Qihuangen_US
dc.date.accessioned2020-07-01T05:22:09Z-
dc.date.available2020-07-01T05:22:09Z-
dc.date.issued2020-05-13en_US
dc.identifier.issn1530-6984en_US
dc.identifier.urihttp://dx.doi.org/10.1021/acs.nanolett.0c00742en_US
dc.identifier.urihttp://hdl.handle.net/11536/154569-
dc.description.abstractA comprehensive understanding of the ultrafast electron dynamics in two-dimensional transition metal dichalcogenides (TMDs) is necessary for their applications in optoelectronic devices. In this work, we contribute a study of ultrafast electron cooling and decay dynamics in the supported and suspended monolayer WS2 by time- and energy-resolved photoemission electron microscopy (PEEM). Electron cooling in the Q valley of the conduction band is clearly resolved in energy and time, on a time scale of 0.3 ps. Electron decay is mainly via a defect trapping process on a time scale of several picoseconds. We observed that the trap states can be produced and increased by laser illumination under an ultrahigh vacuum, and the higher local optical-field intensity led to the faster increase of trap states. The enhanced defect trapping could significantly modify the carrier dynamics and should be paid attention to in photoemission experiments for two-dimensional materials.en_US
dc.language.isoen_USen_US
dc.subjectelectron cooling defect trappingen_US
dc.subjecttransition metal dichalcogenidesen_US
dc.subjectultrafast dynamicsen_US
dc.subjectphotoemission electron microscopyen_US
dc.subjectenergy-resolveden_US
dc.titleUltrafast Electron Cooling and Decay in Monolayer WS2 Revealed by Time- and Energy-Resolved Photoemission Electron Microscopyen_US
dc.typeArticleen_US
dc.identifier.doi10.1021/acs.nanolett.0c00742en_US
dc.identifier.journalNANO LETTERSen_US
dc.citation.volume20en_US
dc.citation.issue5en_US
dc.citation.spage3747en_US
dc.citation.epage3753en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.identifier.wosnumberWOS:000535255300106en_US
dc.citation.woscount0en_US
Appears in Collections:Articles