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dc.contributor.authorUseinov, Arturen_US
dc.contributor.authorLin, Hsiu-Hauen_US
dc.contributor.authorUseinov, Niazbecken_US
dc.contributor.authorTagirov, Lenaren_US
dc.date.accessioned2020-07-01T05:22:10Z-
dc.date.available2020-07-01T05:22:10Z-
dc.date.issued2020-08-15en_US
dc.identifier.issn0304-8853en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.jmmm.2020.166729en_US
dc.identifier.urihttp://hdl.handle.net/11536/154589-
dc.description.abstractThe work represents the extended theoretical model of the electrical conductance in nanoscale magnetic pointlike contacts. The developed approach describes diffusive, quasi-ballistic, ballistic and quantum regimes of the spin-resolved conductance that is important for further development of the contact Andreev reflection spectroscopy, heterojunction models, scanning tunnel microscopy techniques. As a benefit, the model provides a unified description of the contact resistance from Maxwell diffusive through the ballistic to purely quantum transport regimes without residual terms. The model of the point contact assumes that the contact area can be replaced by a complicated object (i.e. the tunnel barrier or complicated one with nanoparticles, narrow domain wall, etc.), where the potential energy profile determines its electrical properties. The model can be easily adapted to particular contact materials, its physical properties and species of the contact area.en_US
dc.language.isoen_USen_US
dc.subjectSpintronicsen_US
dc.subjectInterconnectsen_US
dc.subjectHeterojunctionsen_US
dc.subjectPoint contacten_US
dc.subjectBallistic magnetoresistanceen_US
dc.subjectSpin-resolved conductanceen_US
dc.subjectSpin-resolved contact resistanceen_US
dc.subjectDomain wall resistanceen_US
dc.subjectTunnel magnetoresistanceen_US
dc.titleSpin-resolved electron transport in nanoscale heterojunctions. Theory and applicationsen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.jmmm.2020.166729en_US
dc.identifier.journalJOURNAL OF MAGNETISM AND MAGNETIC MATERIALSen_US
dc.citation.volume508en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department國際半導體學院zh_TW
dc.contributor.departmentInternational College of Semiconductor Technologyen_US
dc.identifier.wosnumberWOS:000535902500011en_US
dc.citation.woscount0en_US
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