完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Lee, Mitchell Sheng-Cheng | en_US |
dc.contributor.author | Chen, Teng-Cheng | en_US |
dc.contributor.author | Liou, Chia-Yi | en_US |
dc.contributor.author | Chiueh, Herming | en_US |
dc.date.accessioned | 2014-12-08T15:21:44Z | - |
dc.date.available | 2014-12-08T15:21:44Z | - |
dc.date.issued | 2011 | en_US |
dc.identifier.isbn | 978-1-4244-9289-3 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/15472 | - |
dc.description.abstract | A 53.4-mu W CMOS temperature sensor with a 3 sigma inaccuracy of +/- 1.9 degrees C from -65 degrees C to 165 degrees C is designed and implemented in TSMC 0.18um CMOS technology. The proposed temperature sensor includes a pure-CMOS PTAT circuitry, a pre-amplifier and a low-power Sigma-Delta ADC. The proposed PATA circuit utilized temperature compensation technology to enhance the linearity. This circuit has widest temperature range compare to other designs, which is suitable to be utilized to electronic devices in extreme temperature condition. | en_US |
dc.language.iso | en_US | en_US |
dc.title | A 53.4-mu W CMOS Temperature Sensor with an Inaccuracy of +/- 1.9 degrees C (3 sigma) from-65 degrees C to 165 degrees C | en_US |
dc.type | Proceedings Paper | en_US |
dc.identifier.journal | 2011 IEEE SENSORS | en_US |
dc.citation.spage | 874 | en_US |
dc.citation.epage | 877 | en_US |
dc.contributor.department | 電機工程學系 | zh_TW |
dc.contributor.department | Department of Electrical and Computer Engineering | en_US |
dc.identifier.wosnumber | WOS:000299901200208 | - |
顯示於類別: | 會議論文 |