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dc.contributor.authorLee, Mitchell Sheng-Chengen_US
dc.contributor.authorChen, Teng-Chengen_US
dc.contributor.authorLiou, Chia-Yien_US
dc.contributor.authorChiueh, Hermingen_US
dc.date.accessioned2014-12-08T15:21:44Z-
dc.date.available2014-12-08T15:21:44Z-
dc.date.issued2011en_US
dc.identifier.isbn978-1-4244-9289-3en_US
dc.identifier.urihttp://hdl.handle.net/11536/15472-
dc.description.abstractA 53.4-mu W CMOS temperature sensor with a 3 sigma inaccuracy of +/- 1.9 degrees C from -65 degrees C to 165 degrees C is designed and implemented in TSMC 0.18um CMOS technology. The proposed temperature sensor includes a pure-CMOS PTAT circuitry, a pre-amplifier and a low-power Sigma-Delta ADC. The proposed PATA circuit utilized temperature compensation technology to enhance the linearity. This circuit has widest temperature range compare to other designs, which is suitable to be utilized to electronic devices in extreme temperature condition.en_US
dc.language.isoen_USen_US
dc.titleA 53.4-mu W CMOS Temperature Sensor with an Inaccuracy of +/- 1.9 degrees C (3 sigma) from-65 degrees C to 165 degrees Cen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2011 IEEE SENSORSen_US
dc.citation.spage874en_US
dc.citation.epage877en_US
dc.contributor.department電機工程學系zh_TW
dc.contributor.departmentDepartment of Electrical and Computer Engineeringen_US
dc.identifier.wosnumberWOS:000299901200208-
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