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dc.contributor.authorHsieh, Ping-Yenen_US
dc.contributor.authorKameyama, Tatsuyaen_US
dc.contributor.authorTakiyama, Takayukien_US
dc.contributor.authorMasuoka, Koen_US
dc.contributor.authorYamamoto, Takahisaen_US
dc.contributor.authorHsu, Yung-Jungen_US
dc.contributor.authorTorimoto, Tsukasaen_US
dc.date.accessioned2020-10-05T01:59:43Z-
dc.date.available2020-10-05T01:59:43Z-
dc.date.issued2020-07-14en_US
dc.identifier.issn2050-7488en_US
dc.identifier.urihttp://dx.doi.org/10.1039/d0ta04127ken_US
dc.identifier.urihttp://hdl.handle.net/11536/154844-
dc.description.abstractBinary semiconductor quantum dots such as CdS and CdSe have been widely studied as photocatalysts for hydrogen production, but the high toxicity of Cd impedes their widespread deployment. Recently, multinary I-III-VI-based semiconductors,e.g., AgInS(2)and CuInS2, have emerged as promising alternatives for environmentally benign photocatalysts. In this work, we prepared quantum dots (QDs) composed of an alloyed ZnSe-AgInSe2(ZAISe) semiconductor and evaluated their photocatalytic activity for hydrogen (H-2) production. By individually controlling the fractions of Zn and Ag, that is, the ratios of (Ag + In)/(Zn + Ag + In) and Ag/(Ag + In), the band structure of ZAISe QDs could be finely tuned to improve their photocatalytic activity. The action spectra of the photocatalytic reaction of ZAISe QDs revealed vigorous activity across the whole visible region from 400 to 700 nm. The highest apparent quantum yield of H(2)production reached 3.4% under irradiation at 600 nm.en_US
dc.language.isoen_USen_US
dc.titleControlling the visible-light driven photocatalytic activity of alloyed ZnSe-AgInSe(2)quantum dots for hydrogen productionen_US
dc.typeArticleen_US
dc.identifier.doi10.1039/d0ta04127ken_US
dc.identifier.journalJOURNAL OF MATERIALS CHEMISTRY Aen_US
dc.citation.volume8en_US
dc.citation.issue26en_US
dc.citation.spage13142en_US
dc.citation.epage13149en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000546391600021en_US
dc.citation.woscount0en_US
Appears in Collections:Articles