Title: Properties of organosilicate low-k films with 1,3-and 1,3,5-benzene bridges between Si atoms
Authors: Liu, Chunhui
Lv, Chunguang
Kohler, Nicole
Wang, Xuesong
Lin, Hongxiao
He, Zhiwei
Wu, Yu-Hsuan
Leu, Jihperng
Wei, Shuhua
Zhang, Jing
Yan, Jiang
Palov, Alexander P.
Baklanov, Mikhail R.
交大名義發表
National Chiao Tung University
Issue Date: 1-Jul-2020
Abstract: Organosilicate (OSG) low dielectric constant films containing different concentrations of 1,3- and 1,3,5-benzene bridges between Si atoms are fabricated using 1,3,5-tribromobenzene via spin-on deposition and evaporation induced self-assembling. Chemical composition, pore structure, mechanical, dielectric and hydrophobic properties of as-prepared benzene bridged OSG thin films are studied using nuclear magnetic resonance, Fourier-transform infrared spectroscopy, ellipsometric porosimetry, nanoindentation, CV measurements and water contact angle. The precursors were synthesized by using two methods with the goal of understanding the effect of 1,3,5-benzene concentration on the films properties. It is shown that the films have very small pore size that does not change with porosity. No significant change in mechanical properties was observed at two different ratios of 1,3- and 1,3,5-benzene bridged films. (C) 2020 The Japan Society of Applied Physics
URI: http://dx.doi.org/10.35848/1347-4065/ab86dc
http://hdl.handle.net/11536/154853
ISSN: 0021-4922
DOI: 10.35848/1347-4065/ab86dc
Journal: JAPANESE JOURNAL OF APPLIED PHYSICS
Volume: 59
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