完整後設資料紀錄
DC 欄位語言
dc.contributor.authorChien, Hung-Yien_US
dc.contributor.authorKuo, Po-Chunen_US
dc.contributor.authorKao, Hui-Lingen_US
dc.contributor.authorChen, Jyh-Shinen_US
dc.contributor.authorChen, Meei-Ruen_US
dc.contributor.authorLu, Li-Syuanen_US
dc.contributor.authorChueh, Wei-Chenen_US
dc.contributor.authorChang, Wen-Haoen_US
dc.date.accessioned2020-10-05T01:59:48Z-
dc.date.available2020-10-05T01:59:48Z-
dc.date.issued2020-08-15en_US
dc.identifier.issn0022-0248en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.jcrysgro.2020.125726en_US
dc.identifier.urihttp://hdl.handle.net/11536/154931-
dc.language.isoen_USen_US
dc.titleLow temperature deposition of high quality single crystalline AlN thin films on sapphire using highly oriented monolayer MoS 2 as a buffer layeren_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.jcrysgro.2020.125726en_US
dc.identifier.journalJOURNAL OF CRYSTAL GROWTHen_US
dc.citation.volume544en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000541156700005en_US
dc.citation.woscount0en_US
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