完整後設資料紀錄
DC 欄位語言
dc.contributor.authorShi, Xuen_US
dc.contributor.authorLi, Xiaoweien_US
dc.contributor.authorToda, Takahiroen_US
dc.contributor.authorOshikiri, Tomoyaen_US
dc.contributor.authorUeno, Koseien_US
dc.contributor.authorSuzuki, Kentaroen_US
dc.contributor.authorMurakoshi, Keien_US
dc.contributor.authorMisawa, Hiroakien_US
dc.date.accessioned2020-10-05T01:59:51Z-
dc.date.available2020-10-05T01:59:51Z-
dc.date.issued2020-06-22en_US
dc.identifier.issn2574-0962en_US
dc.identifier.urihttp://dx.doi.org/10.1021/acsaem.0c00648en_US
dc.identifier.urihttp://hdl.handle.net/11536/154992-
dc.description.abstractPlasmon-induced carrier transfer at metallic nanoparticle/semiconductor heterojunctions has received great attention because of its tremendous potential in applications, such as photocatalysis and photoelectric and energy conversion. The interfacial structure of the heterojunction is known to play an important role in charge transfer as well as the subsequent chemical reactions. Here, we studied the Au nanoparticle (Au-NP)-loaded (100)-, (110)-, and (111)-oriented single-crystalline strontium titanate (STO) as a model to investigate the effects of interfacial structure on the plasmon-induced charge separation between the metallic nanoparticles and semiconductors. Via photoelectrochemical characterizations, we found that the efficiency of the plasmon-induced water oxidation reaction on STO(100) is more than 1.4 times higher than that on the other two orientation facets. This enhancement was demonstrated to stem from the high oxidation ability of plasmon-induced holes captured in the surface states. Furthermore, the molecular processes of water oxidation were investigated by monitoring the surface oxidation status of Au-NP/STO as intermediates of plasmon-induced water oxidation using in situ electrochemical surface-enhanced Raman spectroscopy. The onset potential of Au-O vibrations on Au-NP/STO(100) was determined to be 0.4 V more negative than that of Au-NP/STO(110), further confirming the higher oxidation ability of the plasmon-induced holes. Our observation provides an opportunity to efficiently modulate plasmon-excited hot-carrier reaction processes for photochemical applications through interfacial engineering.en_US
dc.language.isoen_USen_US
dc.subjectinterface statesen_US
dc.subjectlocalized surface plasmon resonanceen_US
dc.subjectwater oxidationen_US
dc.subjectstrontium titanateen_US
dc.subjectsurface orientationen_US
dc.subjectin situ electrochemical surface-enhanced Raman scatteringen_US
dc.titleInterfacial Structure-Modulated Plasmon-Induced Water Oxidation on Strontium Titanateen_US
dc.typeArticleen_US
dc.identifier.doi10.1021/acsaem.0c00648en_US
dc.identifier.journalACS APPLIED ENERGY MATERIALSen_US
dc.citation.volume3en_US
dc.citation.issue6en_US
dc.citation.spage5675en_US
dc.citation.epage5683en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.identifier.wosnumberWOS:000543715100064en_US
dc.citation.woscount0en_US
顯示於類別:期刊論文