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dc.contributor.authorHan, Ping-Chengen_US
dc.contributor.authorYang, Chih-Yien_US
dc.contributor.authorLee, Ming-Wenen_US
dc.contributor.authorWu, Jui-Shengen_US
dc.contributor.authorWu, Chia-Hsunen_US
dc.contributor.authorChang, Edward Yien_US
dc.date.accessioned2020-10-05T02:00:29Z-
dc.date.available2020-10-05T02:00:29Z-
dc.date.issued2019-01-01en_US
dc.identifier.isbn978-1-7281-0080-7en_US
dc.identifier.urihttp://hdl.handle.net/11536/155007-
dc.language.isoen_USen_US
dc.titleHigh Performance Normally-Off AlGaN/GaN MIS-HEMT Using Charge Storage Techniqueen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2019 COMPOUND SEMICONDUCTOR WEEK (CSW)en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department國際半導體學院zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentInternational College of Semiconductor Technologyen_US
dc.identifier.wosnumberWOS:000539485600312en_US
dc.citation.woscount0en_US
Appears in Collections:Conferences Paper


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