High Performance Normally-Off AlGaN/GaN MIS-HEMT Using Charge Storage Technique

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Han, Ping-Cheng	en_US
dc.contributor.author	Yang, Chih-Yi	en_US
dc.contributor.author	Lee, Ming-Wen	en_US
dc.contributor.author	Wu, Jui-Sheng	en_US
dc.contributor.author	Wu, Chia-Hsun	en_US
dc.contributor.author	Chang, Edward Yi	en_US
dc.date.accessioned	2020-10-05T02:00:29Z	-
dc.date.available	2020-10-05T02:00:29Z	-
dc.date.issued	2019-01-01	en_US
dc.identifier.isbn	978-1-7281-0080-7	en_US
dc.identifier.uri	http://hdl.handle.net/11536/155007	-
dc.language.iso	en_US	en_US
dc.title	High Performance Normally-Off AlGaN/GaN MIS-HEMT Using Charge Storage Technique	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2019 COMPOUND SEMICONDUCTOR WEEK (CSW)	en_US
dc.citation.spage	0	en_US
dc.citation.epage	0	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	國際半導體學院	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.contributor.department	International College of Semiconductor Technology	en_US
dc.identifier.wosnumber	WOS:000539485600312	en_US
dc.citation.woscount	0	en_US
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