標題: Failure Analysis on TiAl Metallization Process for Ohmic Contact on 4H-SiC pMOSFET
作者: Hung, Chia-Lung
Cheng, Jung-Chien
Tsui, Bing-Yue
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: 4H-SiC pMOSFET;ohmic contact;Al spiking;leakage current;Blocking layer
公開日期: 1-Jan-2019
摘要: SiC is suitable for high-power and high-temperature applications due to its' wide energy bandgap and high thermal conductivity. Most literature focus on SiC nMOSFET due to higher electron mobility than hole. In this work, we fabricated 4H-SiC pMOSFET using TiAl alloy as contact metal to reduce the contact resistivity. However, ultrahigh leakage current was measured among all terminals of the pMOSFET. By comparing with different contact schemes, the failure mechanism is attributed to Al spiking into the underneath poly-Si and SiO2 during the metallization process. Using suitable blocking layer such as LPCVD Si3N4 (300 nm) or PECVD Si3N4 (100 nm) on SiO2 (200 nm) can avoid Al spiking so that conventional pattern topology and TiAl metallization process can be used on device fabrication.
URI: http://hdl.handle.net/11536/155029
ISBN: 978-1-7281-3552-6
ISSN: 1946-1550
期刊: 2019 IEEE 26TH INTERNATIONAL SYMPOSIUM ON PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA)
起始頁: 0
結束頁: 0
Appears in Collections:Conferences Paper