Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kumar, Amit | en_US |
dc.contributor.author | Kumar, Nagesh | en_US |
dc.contributor.author | Singh, Pragya | en_US |
dc.contributor.author | Leu, Jihperng | en_US |
dc.contributor.author | Tseng, Tseung-Yuen | en_US |
dc.date.accessioned | 2020-10-05T02:00:30Z | - |
dc.date.available | 2020-10-05T02:00:30Z | - |
dc.date.issued | 2018-01-01 | en_US |
dc.identifier.isbn | 978-1-60768-841-9 | en_US |
dc.identifier.issn | 1938-5862 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1149/08513.0521ecst | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/155030 | - |
dc.description.abstract | In this study, we report the electrophoretic deposition (EPD) of nitrogen-boron co-doped graphene (NBG) synthesized via simple hydrothermal method and subsequent annealing at 750 degrees C in reducing environment. The structural, chemical-compositional and morphological investigations of the as synthesized NBG have been investigated using X-ray diffraction (XRD), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), field emission scanning electron microscopy (FE-SEM) and transmission electron microscopy (TEM). The electrochemical properties of the samples have been studied via cyclic voltammetry (CV), galvanostatic charge-discharge (GCD) cycling and electrochemical impedance spectroscopy (EIS) in a conventional three-electrode system using 6M KOH aqueous electrolyte. The EPD grown binder free NBG electrode exhibits high specific capacitance of 217 Fg(-1) at the scan rate of 5 mVs(-1) which is about 1.2 times higher than the specific capacitance (180 Fg(-1) at 5 mVs(-1)) of pristine reduced graphene oxide synthesized via similar approach. Furthermore, this sample exhibits excellent rate capability, and similar to 103% retention after 8800 successive charge-discharge cycles at 1 Ag-1. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Electrophoretic Deposition of Nitrogen-Boron Co-Doped Graphene as High Performance Electrode for Next Generation Supercapacitors | en_US |
dc.type | Proceedings Paper | en_US |
dc.identifier.doi | 10.1149/08513.0521ecst | en_US |
dc.identifier.journal | SELECTED PROCEEDINGS FROM THE 233RD ECS MEETING | en_US |
dc.citation.volume | 85 | en_US |
dc.citation.issue | 13 | en_US |
dc.citation.spage | 521 | en_US |
dc.citation.epage | 530 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000541678600048 | en_US |
dc.citation.woscount | 1 | en_US |
Appears in Collections: | Conferences Paper |