完整後設資料紀錄
DC 欄位語言
dc.contributor.authorKumar, Amiten_US
dc.contributor.authorKumar, Nageshen_US
dc.contributor.authorSingh, Pragyaen_US
dc.contributor.authorLeu, Jihperngen_US
dc.contributor.authorTseng, Tseung-Yuenen_US
dc.date.accessioned2020-10-05T02:00:30Z-
dc.date.available2020-10-05T02:00:30Z-
dc.date.issued2018-01-01en_US
dc.identifier.isbn978-1-60768-841-9en_US
dc.identifier.issn1938-5862en_US
dc.identifier.urihttp://dx.doi.org/10.1149/08513.0521ecsten_US
dc.identifier.urihttp://hdl.handle.net/11536/155030-
dc.description.abstractIn this study, we report the electrophoretic deposition (EPD) of nitrogen-boron co-doped graphene (NBG) synthesized via simple hydrothermal method and subsequent annealing at 750 degrees C in reducing environment. The structural, chemical-compositional and morphological investigations of the as synthesized NBG have been investigated using X-ray diffraction (XRD), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), field emission scanning electron microscopy (FE-SEM) and transmission electron microscopy (TEM). The electrochemical properties of the samples have been studied via cyclic voltammetry (CV), galvanostatic charge-discharge (GCD) cycling and electrochemical impedance spectroscopy (EIS) in a conventional three-electrode system using 6M KOH aqueous electrolyte. The EPD grown binder free NBG electrode exhibits high specific capacitance of 217 Fg(-1) at the scan rate of 5 mVs(-1) which is about 1.2 times higher than the specific capacitance (180 Fg(-1) at 5 mVs(-1)) of pristine reduced graphene oxide synthesized via similar approach. Furthermore, this sample exhibits excellent rate capability, and similar to 103% retention after 8800 successive charge-discharge cycles at 1 Ag-1.en_US
dc.language.isoen_USen_US
dc.titleElectrophoretic Deposition of Nitrogen-Boron Co-Doped Graphene as High Performance Electrode for Next Generation Supercapacitorsen_US
dc.typeProceedings Paperen_US
dc.identifier.doi10.1149/08513.0521ecsten_US
dc.identifier.journalSELECTED PROCEEDINGS FROM THE 233RD ECS MEETINGen_US
dc.citation.volume85en_US
dc.citation.issue13en_US
dc.citation.spage521en_US
dc.citation.epage530en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000541678600048en_US
dc.citation.woscount1en_US
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