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Effects of random number and location of the nanosized metal grains on the threshold voltage variability of silicon gate-all-around nanowiren-type metal-oxide-semiconductor field-effect transistors | 1 |
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Effects of random number and location of the nanosized metal grains on the threshold voltage variability of silicon gate-all-around nanowiren-type metal-oxide-semiconductor field-effect transistors | 0 | 0 | 0 | 0 | 0 | 0 | 1 |
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