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dc.contributor.authorRullyani, Cuten_US
dc.contributor.authorSingh, Mrigankaen_US
dc.contributor.authorLi, Sheng-Hanen_US
dc.contributor.authorSung, Chao-Fengen_US
dc.contributor.authorLin, Hong-Cheuen_US
dc.contributor.authorChu, Chih-Weien_US
dc.date.accessioned2020-10-05T02:01:06Z-
dc.date.available2020-10-05T02:01:06Z-
dc.date.issued2020-10-01en_US
dc.identifier.issn1566-1199en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.orgel.2020.105818en_US
dc.identifier.urihttp://hdl.handle.net/11536/155137-
dc.description.abstractTemperature is a characteristic often correlated with environmental and health issues. This paper presents an organic thin film transistor (OTFT) based temperature sensor having a detection range of 30-45 degrees C, which, therefore, encompasses the human body temperature. The OTFT sensor featured thermosensitive poly(N-iso-propylacrylamide) (PNIPAM) and pentacene as the gate dielectric and semiconductor, respectively. The PNIPAM film possessed a dielectric constant of 4.2 with very low leakage current density. The OTFT exhibited high electrical performance, with a hole mobility (mu) of 0.90 +/- 0.04 cm(2) V-1 s(-1), a threshold voltage (V-th) of -15.4 +/- 1.16 V, and an on/off ratio of 10(4). Significant changes in the drain current and the values of V-th and mu occurred when the temperature of the device was varied within the range 30-45 degrees C at an interval of 0.5 degrees C. The operating principle for this temperature sensor was based on the structural transformation of the PNIPAM dielectric and the enhanced charge transport of the pentacene semiconductor upon varying the temperature. Flexible OTFTs fabricated on polyethylene terephthalate substrate displayed hole mobilities as high as 0.39 +/- 0.01 cm(2) V-1 s(-1), values of V-th of 18.6 +/- 0.45, and on/off ratios of 10(2), and were workable for over 100 bending cycles.en_US
dc.language.isoen_USen_US
dc.subjectOrganic thin film transistoren_US
dc.subjectSensoren_US
dc.subjectTemperatureen_US
dc.subjectpoly(N-isopropylacrylamide) (PNIPAM)en_US
dc.titleStimuli-responsive polymer as gate dielectric for organic transistor sensorsen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.orgel.2020.105818en_US
dc.identifier.journalORGANIC ELECTRONICSen_US
dc.citation.volume85en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.department顯示科技研究所zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of Displayen_US
dc.identifier.wosnumberWOS:000560061100020en_US
dc.citation.woscount0en_US
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