完整後設資料紀錄
DC 欄位語言
dc.contributor.authorChang, Yung-Shanen_US
dc.contributor.authorHsieh, Ping-Yenen_US
dc.contributor.authorChang, Tso-Fu Marken_US
dc.contributor.authorChen, Chun-Yien_US
dc.contributor.authorSone, Masatoen_US
dc.contributor.authorHsu, Yung-Jungen_US
dc.date.accessioned2020-10-05T02:01:07Z-
dc.date.available2020-10-05T02:01:07Z-
dc.date.issued2020-07-28en_US
dc.identifier.issn2050-7488en_US
dc.identifier.urihttp://dx.doi.org/10.1039/d0ta02359ken_US
dc.identifier.urihttp://hdl.handle.net/11536/155158-
dc.description.abstractThis work demonstrated that the incorporation of graphene quantum dots (GQDs) can greatly improve the photoelectrochemical (PEC) efficiency of CdSe-sensitized TiO2 nanorods (TiO2/CdSe), a TiO2-based visible light-responsive photoelectrode paradigm, for solar hydrogen production. For TiO2/CdSe, the accumulated holes at CdSe may induce photocorrosive oxidation to decompose CdSe, deteriorating the long-term stability of the photoelectrode and degrading the PEC performance. With the introduction of GQDs, the delocalized holes can further transfer from CdSe to the GQDs, which eases the hole accumulation at the CdSe sites, thus retarding photocorrosion. Compared to the binary TiO2/CdSe photoanode, the ternary TiO2/CdSe/GQD photoanode displays higher photocurrent and better photostability toward PEC hydrogen production. This superiority can be attributed to vectorial charge transfer and enhanced reaction kinetics provided by the introduction of GQDs. The findings from this work highlight the importance of the introduction of GQDs as a potential solution to the photocorrosion issue of chalcogenide-sensitized semiconductor photoelectrodes.en_US
dc.language.isoen_USen_US
dc.titleIncorporating graphene quantum dots to enhance the photoactivity of CdSe-sensitized TiO2 nanorods for solar hydrogen productionen_US
dc.typeArticleen_US
dc.identifier.doi10.1039/d0ta02359ken_US
dc.identifier.journalJOURNAL OF MATERIALS CHEMISTRY Aen_US
dc.citation.volume8en_US
dc.citation.issue28en_US
dc.citation.spage13971en_US
dc.citation.epage13979en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000551538000045en_US
dc.citation.woscount3en_US
顯示於類別:期刊論文