標題: Impact of electrode thermal conductivity on high resistance state level in HfO2-based RRAM
作者: Lin, Shih-Kai
Wu, Cheng-Hsien
Chen, Min-Chen
Chang, Ting-Chang
Lien, Chen-Hsin
Xu, You-Lin
Tseng, Yi-Ting
Wu, Pei-Yu
Tan, Yung-Fang
Sun, Li-Chuan
Zhang, Yong-Ci
Huang, Jen-Wei
Sze, Simon M.
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: resistance random access memory (RRAM);reset behavior;thermal conductivity;oxygen ions;switching region
公開日期: 23-Sep-2020
摘要: This study examines the influence of different electrode thermal conductivity on switching behavior during the reset process. Electrical analysis methods and an analysis of current conduction mechanism indicate that better thermal conductivity in the electrode will require larger input power in order to induce more active oxygen ions to take part in the reset process. More active oxygen ions result in a more oxidized switching layer, and cause the effective switching gap (d(sw)) to become larger in the reset process. The effect of the electrode thermal conductivity and input power are explained by our model and clarified by electrical analysis methods.
URI: http://dx.doi.org/10.1088/1361-6463/ab92c5
http://hdl.handle.net/11536/155163
ISSN: 0022-3727
DOI: 10.1088/1361-6463/ab92c5
期刊: JOURNAL OF PHYSICS D-APPLIED PHYSICS
Volume: 53
Issue: 39
起始頁: 0
結束頁: 0
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