Lasing Characteristics of GaN-based Photonic Crystal Surface-Emitting Lasers

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Chen, Shih-Wei	en_US
dc.contributor.author	Kao, Tsung-Ting	en_US
dc.contributor.author	Liu, Tzu-Wei	en_US
dc.contributor.author	Lu, Tien-Chang	en_US
dc.contributor.author	Kuo, Hao-Chung	en_US
dc.contributor.author	Wang, Shing-Chung	en_US
dc.date.accessioned	2014-12-08T15:21:47Z	-
dc.date.available	2014-12-08T15:21:47Z	-
dc.date.issued	2009	en_US
dc.identifier.isbn	978-1-4244-3829-7	en_US
dc.identifier.uri	http://hdl.handle.net/11536/15520	-
dc.description.abstract	We successfully demonstrated and analyzed the characteristics of GaN-based photonic-crystal surface emitting lasers at room temperature at different band edges (Gamma, K, and M), showing specific thresholds and polarization angles	en_US
dc.language.iso	en_US	en_US
dc.subject	Photonic crystal	en_US
dc.subject	lasers	en_US
dc.title	Lasing Characteristics of GaN-based Photonic Crystal Surface-Emitting Lasers	en_US
dc.type	Article	en_US
dc.identifier.journal	2009 LASERS & ELECTRO-OPTICS & THE PACIFIC RIM CONFERENCE ON LASERS AND ELECTRO-OPTICS, VOLS 1 AND 2	en_US
dc.citation.spage	139	en_US
dc.citation.epage	140	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000277829300077	-
顯示於類別：	會議論文