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dc.contributor.authorHuang, Hsin-Huien_US
dc.contributor.authorWu, Tzu-Yunen_US
dc.contributor.authorChu, Yueh-Huaen_US
dc.contributor.authorWu, Ming-Hungen_US
dc.contributor.authorHsu, Chien-Huaen_US
dc.contributor.authorLee, Heng-Yuanen_US
dc.contributor.authorSheu, Shyh-Shyuanen_US
dc.contributor.authorLo, Wei-Chungen_US
dc.contributor.authorHou, Tuo-Hungen_US
dc.date.accessioned2020-10-05T02:01:28Z-
dc.date.available2020-10-05T02:01:28Z-
dc.date.issued2019-01-01en_US
dc.identifier.isbn978-1-7281-4031-5en_US
dc.identifier.issn2380-9248en_US
dc.identifier.urihttp://hdl.handle.net/11536/155255-
dc.description.abstractA modeling framework for ferroelectric tunnel junctions (FTJs) that considers nonpolar interfacial layers (ILs), multi-domain polarization, and complete ferroelectric/capacitive/tunneling currents simultaneously is proposed. This model explains both read and write operations including the controversial switching polarities of FTJ. We also provide useful guidelines for optimizing FTJ performance where the location of IL and the effective thickness ratio between ferroelectric and interfacial layers are found to be most critical.en_US
dc.language.isoen_USen_US
dc.titleA Comprehensive Modeling Framework for Ferroelectric Tunnel Junctionsen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2019 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000553550000159en_US
dc.citation.woscount0en_US
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