標題: Modeling of switching speed and retention time in volatile resistive switching memory by ionic drift and diffusion
作者: Wang, Wei
Covi, Erika
Lin, Yu-Hsuan
Ambrosi, Elia
Ielmini, Daniele
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Jan-2019
摘要: The understanding of the dynamic mechanism of volatile resistive switching memory devices is of paramount importance to further increase the switching speed. It is also of great value for future neuromorphic applications which use such devices in temporal domain In this work, we investigate the switching speed and retention time of metallic filamentary volatile resistive switching devices. We find that the switching speed can be quantitatively described by the ionic mobility, while the retention time can be quantitatively described by the surface ionic diffusion following the gradient descent of surface atomic concentration. Further analysis reveals that the ionic mobility and surface diffusivity can be connected with Einstein relation. Finally, evidences supporting this relation and experimental data showing the competition of the ionic drift and diffusion are collected and shown.
URI: http://hdl.handle.net/11536/155256
ISBN: 978-1-7281-4031-5
ISSN: 2380-9248
期刊: 2019 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)
起始頁: 0
結束頁: 0
Appears in Collections:Conferences Paper