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dc.contributor.authorHuang, Ching-Yingen_US
dc.contributor.authorHsieh, Kuan-Hanen_US
dc.contributor.authorHu, Roberten_US
dc.date.accessioned2020-10-05T02:01:31Z-
dc.date.available2020-10-05T02:01:31Z-
dc.date.issued2019-01-01en_US
dc.identifier.isbn978-1-7281-3403-1en_US
dc.identifier.issn1559-9450en_US
dc.identifier.urihttp://hdl.handle.net/11536/155300-
dc.description.abstractWith its low attenuation and high directivity, the 77 similar to 110 GHz (W-band) frequency range is suitable for long-distance broadband applications. Although only 77 GHz and 94 GHz have been used for vehicular radar and military surveillance so far, the W-band spectra is destined to play an even important role in the post-5G era. This manuscript describes our development on the 40 nm-CMOS W-band phase shifter design where 5 bits are used for phase shift of 11.25 degrees while additional 4-bit logics are for fine-tuning purpose. The input signal is first be amplified by a wideband amplifier and then transformed through poly-phase circuit into I/Q signals, whose magnitude will then be altered by the following digital VGAs. By making the vector sum at the output, phase shifting in the range of 0 degrees similar to 360 degrees can be obtained and the resolution is 11.25 degrees.en_US
dc.language.isoen_USen_US
dc.title40 nm-CMOS W-band Phase Shifter for Millimeter-wave Phased Arrayen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2019 PHOTONICS & ELECTROMAGNETICS RESEARCH SYMPOSIUM - SPRING (PIERS-SPRING)en_US
dc.citation.spage1700en_US
dc.citation.epage1705en_US
dc.contributor.department電機學院zh_TW
dc.contributor.departmentCollege of Electrical and Computer Engineeringen_US
dc.identifier.wosnumberWOS:000550769301124en_US
dc.citation.woscount0en_US
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