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dc.contributor.authorShi, Jin-Weien_US
dc.contributor.authorKhan, Zuhaiben_US
dc.contributor.authorHorng, Ray-Huaen_US
dc.contributor.authorYeh, Hsiao-Yunen_US
dc.contributor.authorHuang, Chun-Kaien_US
dc.contributor.authorLiu, Cheng-Yien_US
dc.contributor.authorShih, Jie-Chenen_US
dc.contributor.authorChang, Yung-Haoen_US
dc.contributor.authorYen, Jia-Liangen_US
dc.contributor.authorSheu, Jinn-Kongen_US
dc.date.accessioned2020-10-05T02:01:53Z-
dc.date.available2020-10-05T02:01:53Z-
dc.date.issued2020-09-01en_US
dc.identifier.issn0146-9592en_US
dc.identifier.urihttp://dx.doi.org/10.1364/OL.398896en_US
dc.identifier.urihttp://hdl.handle.net/11536/155312-
dc.description.abstractIn this work, we demonstrate a novel high-power vertical-cavity surface-emitting laser (VCSEL) array with highly single-mode (SM) and single-polarized output performance without significantly increasing the intra-cavity loss and threshold current (Ith). By combining a low-loss zinc-diffusion aperture with an electroplated copper substrate, we can obtain a highly SM output (side mode suppression ratio >50 dB) with a wry narrow divergence angle (1 / e(2) : similar to 10 degrees) under high output power (3.1 W; 1% duty cycle) and sustain a single polarization state, with a polarization suppression ratio of around 9 dB, under the full range of bias currents. Compared to the reference device without the copper substrate, the demonstrated array can not only switch the output optical spectra from quasi-SM to highly SM but also maintain a close threshold current value (Ith: 0.8 versus 0.7 mA per unit device) and slope efficiency. The enhancement in fundamental mode selectivity of our VCSEL structure can be attributed to the single-polarized lasing mode induced by tensile strain, which is caused by the electroplated copper substrate, as verified by the double-crystal x-ray measurement results. (C) 2020 Optical Society of Americaen_US
dc.language.isoen_USen_US
dc.titleHigh-power and single-mode VCSEL arrays with single-polarized outputs by using package-induced tensile strainen_US
dc.typeArticleen_US
dc.identifier.doi10.1364/OL.398896en_US
dc.identifier.journalOPTICS LETTERSen_US
dc.citation.volume45en_US
dc.citation.issue17en_US
dc.citation.spage4839en_US
dc.citation.epage4842en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000564921500047en_US
dc.citation.woscount0en_US
Appears in Collections:Articles