完整後設資料紀錄
DC 欄位 | 值 | 語言 |
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dc.contributor.author | Aljarb, Areej | en_US |
dc.contributor.author | Fu, Jui-Han | en_US |
dc.contributor.author | Hsu, Chih-Chan | en_US |
dc.contributor.author | Chuu, Chih-Piao | en_US |
dc.contributor.author | Wan, Yi | en_US |
dc.contributor.author | Hakami, Mariam | en_US |
dc.contributor.author | Naphade, Dipti R. | en_US |
dc.contributor.author | Yengel, Emre | en_US |
dc.contributor.author | Lee, Chien-Ju | en_US |
dc.contributor.author | Brems, Steven | en_US |
dc.contributor.author | Chen, Tse-An | en_US |
dc.contributor.author | Li, Ming-Yang | en_US |
dc.contributor.author | Bae, Sang-Hoon | en_US |
dc.contributor.author | Hsu, Wei-Ting | en_US |
dc.contributor.author | Cao, Zhen | en_US |
dc.contributor.author | Albaridy, Rehab | en_US |
dc.contributor.author | Lopatin, Sergei | en_US |
dc.contributor.author | Chang, Wen-Hao | en_US |
dc.contributor.author | Anthopoulos, Thomas D. | en_US |
dc.contributor.author | Kim, Jeehwan | en_US |
dc.contributor.author | Li, Lain-Jong | en_US |
dc.contributor.author | Tung, Vincent | en_US |
dc.date.accessioned | 2020-10-05T02:01:56Z | - |
dc.date.available | 2020-10-05T02:01:56Z | - |
dc.date.issued | 1970-01-01 | en_US |
dc.identifier.issn | 1476-1122 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1038/s41563-020-0795-4 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/155353 | - |
dc.description.abstract | Two-dimensional transition metal dichalcogenide nanoribbons are touted as the future extreme device downscaling for advanced logic and memory devices but remain a formidable synthetic challenge. Here, we demonstrate a ledge-directed epitaxy (LDE) of dense arrays of continuous, self-aligned, monolayer and single-crystalline MoS(2)nanoribbons on beta-gallium (iii) oxide (beta-Ga2O3) (100) substrates. LDE MoS(2)nanoribbons have spatial uniformity over a long range and transport characteristics on par with those seen in exfoliated benchmarks. Prototype MoS2-nanoribbon-based field-effect transistors exhibit high on/off ratios of 10(8)and an averaged room temperature electron mobility of 65 cm(2) V-1 s(-1). The MoS(2)nanoribbons can be readily transferred to arbitrary substrates while the underlying beta-Ga(2)O(3)can be reused after mechanical exfoliation. We further demonstrate LDE as a versatile epitaxy platform for the growth of p-type WSe(2)nanoribbons and lateral heterostructures made of p-WSe(2)and n-MoS(2)nanoribbons for futuristic electronics applications. Aligned arrays of single-crystalline monolayer TMD nanoribbons with high aspect ratios, as well as their lateral heterostructures, are realized, with the growth directed by the ledges on the beta-Ga(2)O(3)substrate. This approach provides an epitaxy platform for advanced electronics applications of TMD nanoribbons. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Ledge-directed epitaxy of continuously self-aligned single-crystalline nanoribbons of transition metal dichalcogenides | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1038/s41563-020-0795-4 | en_US |
dc.identifier.journal | NATURE MATERIALS | en_US |
dc.citation.spage | 0 | en_US |
dc.citation.epage | 0 | en_US |
dc.contributor.department | 交大名義發表 | zh_TW |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | National Chiao Tung University | en_US |
dc.contributor.department | Department of Electrophysics | en_US |
dc.identifier.wosnumber | WOS:000566854700001 | en_US |
dc.citation.woscount | 0 | en_US |
顯示於類別: | 期刊論文 |