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dc.contributor.authorOu, Po-Chien_US
dc.contributor.authorLin, Ja-Honen_US
dc.contributor.authorChang, C. A.en_US
dc.contributor.authorLiu, W. R.en_US
dc.contributor.authorHsieh, Wen-Fengen_US
dc.date.accessioned2014-12-08T15:21:50Z-
dc.date.available2014-12-08T15:21:50Z-
dc.date.issued2009en_US
dc.identifier.isbn978-1-4244-3829-7en_US
dc.identifier.urihttp://hdl.handle.net/11536/15541-
dc.description.abstractUltrafast carrier dynamics of ZnO epifilm were investigated by the pump probe meausrement Relative fast occruring and recovery of band gap renormalizaion following the band filling effect will result in transmission change at 362 nm.en_US
dc.language.isoen_USen_US
dc.subjectpump-probeen_US
dc.subjectcarrier dynamicsen_US
dc.subjectZnOen_US
dc.titleCarrier dynamics of thin ZnO epifilm above band-gap statesen_US
dc.typeArticleen_US
dc.identifier.journal2009 LASERS & ELECTRO-OPTICS & THE PACIFIC RIM CONFERENCE ON LASERS AND ELECTRO-OPTICS, VOLS 1 AND 2en_US
dc.citation.spage603en_US
dc.citation.epage604en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000277829300314-
Appears in Collections:Conferences Paper


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