Carrier dynamics of thin ZnO epifilm above band-gap states

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Ou, Po-Chi	en_US
dc.contributor.author	Lin, Ja-Hon	en_US
dc.contributor.author	Chang, C. A.	en_US
dc.contributor.author	Liu, W. R.	en_US
dc.contributor.author	Hsieh, Wen-Feng	en_US
dc.date.accessioned	2014-12-08T15:21:50Z	-
dc.date.available	2014-12-08T15:21:50Z	-
dc.date.issued	2009	en_US
dc.identifier.isbn	978-1-4244-3829-7	en_US
dc.identifier.uri	http://hdl.handle.net/11536/15541	-
dc.description.abstract	Ultrafast carrier dynamics of ZnO epifilm were investigated by the pump probe meausrement Relative fast occruring and recovery of band gap renormalizaion following the band filling effect will result in transmission change at 362 nm.	en_US
dc.language.iso	en_US	en_US
dc.subject	pump-probe	en_US
dc.subject	carrier dynamics	en_US
dc.subject	ZnO	en_US
dc.title	Carrier dynamics of thin ZnO epifilm above band-gap states	en_US
dc.type	Article	en_US
dc.identifier.journal	2009 LASERS & ELECTRO-OPTICS & THE PACIFIC RIM CONFERENCE ON LASERS AND ELECTRO-OPTICS, VOLS 1 AND 2	en_US
dc.citation.spage	603	en_US
dc.citation.epage	604	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000277829300314	-
顯示於類別：	會議論文