標題: A 270-GHz CMOS Triple-Push Ring Oscillator With a Coupled-Line Matching Network
作者: Kim, Sooyeon
Yoon, Daekeun
Rieh, Jae-Sung
國際半導體學院
International College of Semiconductor Technology
關鍵字: Ring oscillators;Impedance matching;CMOS technology;Steady-state;Impedance;Harmonic analysis;complementary metal-oxide-semiconductor (CMOS);coupled lines;harmonic generation;millimeter wave;oscillators;ring oscillators;submillimeter wave;terahertz;triple push
公開日期: 1-Sep-2019
摘要: A design procedure is proposed for triple-push ring oscillators, and an oscillator employing a coupled line-matching network is developed following the procedure. This stepwise procedure, which uses power-dependent Z-parameters of transistors, is applied to the design of each amplifier stage constituting a ring oscillator based on its steady-state oscillation condition. It is verified with both L-section and T-section topologies assumed for the load of the amplifier stages of a given triple-push ring oscillator, and the differences between the two topologies are compared. Based on the procedure, a 270 GHz triple-push ring oscillator that employs coupled lines for matching networks has been developed in a 65-nm complementary metal-oxide-semiconductor (CMOS) process. The circuit benefits from the advantages of coupled lines such as compact area and simplified layout. The fabricated oscillator exhibits a measured oscillation frequency of around 270 GHz and output power of -10.9 dBm, with phase noise of -96 dBc/Hz at 10 MHz offset.
URI: http://dx.doi.org/10.1109/TTHZ.2019.2923556
http://hdl.handle.net/11536/155425
ISSN: 2156-342X
DOI: 10.1109/TTHZ.2019.2923556
期刊: IEEE TRANSACTIONS ON TERAHERTZ SCIENCE AND TECHNOLOGY
Volume: 9
Issue: 5
起始頁: 449
結束頁: 462
Appears in Collections:Articles