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dc.contributor.authorRees, David G.en_US
dc.contributor.authorYeh, Sheng-Shiuanen_US
dc.contributor.authorLee, Ban-Chenen_US
dc.contributor.authorSchnyder, Simon K.en_US
dc.contributor.authorWilliams, Francis I. B.en_US
dc.contributor.authorLin, Juhn-Jongen_US
dc.contributor.authorKono, Kimitoshien_US
dc.date.accessioned2020-10-05T02:02:01Z-
dc.date.available2020-10-05T02:02:01Z-
dc.date.issued2020-08-24en_US
dc.identifier.issn2469-9950en_US
dc.identifier.urihttp://dx.doi.org/10.1103/PhysRevB.102.075439en_US
dc.identifier.urihttp://hdl.handle.net/11536/155429-
dc.description.abstractWe investigate the dynamical interaction between an electron crystal trapped above the surface of liquid helium and surface waves ('ripplons') excited by its motion. At rest, the electron system is 'dressed' by static ripplons to form 'ripplopolaron' states. As the electrons move, resonant ripplon scattering results in a growth of the ripplopolaron effective mass, on timescales comparable with the inverse of the ripplon frequency (similar to 100 ns). Under sufficient driving force, the electron system decouples from the surface waves and moves at high velocity, before decelerating sharply when the electron solid and surface excitations recouple to form a 'new' ripplopolaron system. The mass of the newly formed ripplopolarons is similar to that in the initial static case.en_US
dc.language.isoen_USen_US
dc.titleDynamical decoupling and recoupling of the Wigner solid to a liquid helium substrateen_US
dc.typeArticleen_US
dc.identifier.doi10.1103/PhysRevB.102.075439en_US
dc.identifier.journalPHYSICAL REVIEW Ben_US
dc.citation.volume102en_US
dc.citation.issue7en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department物理研究所zh_TW
dc.contributor.department國際半導體學院zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentInstitute of Physicsen_US
dc.contributor.departmentInternational College of Semiconductor Technologyen_US
dc.identifier.wosnumberWOS:000562001800006en_US
dc.citation.woscount0en_US
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