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dc.contributor.authorChen, Chih-Yenen_US
dc.contributor.authorLin, Tzu-Chienen_US
dc.contributor.authorChuang, Wen-Shuoen_US
dc.contributor.authorChang, Jeng-Kueien_US
dc.contributor.authorLee, Sheng-Weien_US
dc.date.accessioned2020-10-05T02:02:02Z-
dc.date.available2020-10-05T02:02:02Z-
dc.date.issued2020-11-15en_US
dc.identifier.issn0169-4332en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.apsusc.2020.147204en_US
dc.identifier.urihttp://hdl.handle.net/11536/155449-
dc.description.abstractIn this study, free-standing and well-aligned titanium dioxide (TiO2) nanowires were grown on a Ti foil by precisely controlling the growth temperature and the thickness of the Ge catalyst layer. The catalyst layer played an important role in activating the surface of the Ti foil, facilitating the growth of TiO2 nanowires on it in a chemical vapor deposition furnace system. The structure of the TiO2 nanowires was investigated using scanning electron microscopy, transmission electron microscopy, and Raman spectroscopy. The photocatalytic experiment results showed that the optimum Ge catalyst layer thickness significantly improved the rhodamine B (RhB) degradation efficiency of the nanowires. The TiO2 nanowires grown using a 40-nm-thick Ge layer could degrade 74% of RhB after 5 h of ultraviolet irradiation. In addition, the TiO2 nanowires exhibited excellent electron field emission performance as compared to the TiO2 nanocrystals grown without the Ge catalyst layer. The results suggested that TiO2 nanowires grown using a Ge catalyst layer are promising materials for next-generation electronic emitters and photocatalytic systems.en_US
dc.language.isoen_USen_US
dc.subjectTiO2 nanowiresen_US
dc.subjectGermaniumen_US
dc.subjectElectronic emittersen_US
dc.subjectPhotocatalyticen_US
dc.subjectPhotodegradationen_US
dc.titleGermanium-assisted growth of titanium dioxide nanowires for enhanced photocatalytic and electron emission performanceen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.apsusc.2020.147204en_US
dc.identifier.journalAPPLIED SURFACE SCIENCEen_US
dc.citation.volume530en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000562343800004en_US
dc.citation.woscount0en_US
Appears in Collections:Articles