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dc.contributor.authorKingra, Sandeep Kauren_US
dc.contributor.authorParmar, Viveken_US
dc.contributor.authorChang, Che-Chiaen_US
dc.contributor.authorHudec, Borisen_US
dc.contributor.authorHou, Tuo-Hungen_US
dc.contributor.authorSuri, Mananen_US
dc.date.accessioned2020-10-05T02:02:02Z-
dc.date.available2020-10-05T02:02:02Z-
dc.date.issued2020-02-13en_US
dc.identifier.issn2045-2322en_US
dc.identifier.urihttp://dx.doi.org/10.1038/s41598-020-59121-0en_US
dc.identifier.urihttp://hdl.handle.net/11536/155457-
dc.description.abstractvon Neumann architecture based computers isolate computation and storage (i.e. data is shuttled between computation blocks (processor) and memory blocks). The to-and-fro movement of data leads to a fundamental limitation of modern computers, known as the Memory wall. Logic in-Memory (LIM)/In-Memory Computing (IMC) approaches aim to address this bottleneck by directly computing inside memory units thereby eliminating energy-intensive and time-consuming data movement. Several recent works in literature, propose realization of logic function(s) directly using arrays of emerging resistive memory devices (example- memristors, RRAM/ReRAM, PCM, CBRAM, OxRAM, STT-MRAM etc.), rather than using conventional transistors for computing. The logic/embedded-side of digital systems (like processors, micro-controllers) can greatly benefit from such LIM realizations. However, the pure storage-side of digital systems (example SSDs, enterprise storage etc.) will not benefit much from such LIM approaches as when memory arrays are used for logic they lose their core functionality of storage. Thus, there is the need for an approach complementary to existing LIM techniques, that's more beneficial for the storage-side of digital systems; one that gives compute capability to memory arrays not at the cost of their existing stored states. Fundamentally, this would require memory nanodevice arrays that are capable of storing and computing simultaneously. In this paper, we propose a novel 'Simultaneous Logic in-Memory' (SLIM) methodology which is complementary to existing LIM approaches in literature. Through extensive experiments we demonstrate novel SLIM bitcells (1T-1R/2T-1R) comprising non-filamentary bilayer analog OxRAM devices with NMOS transistors. Proposed bitcells are capable of implementing both Memory and Logic operations simultaneously. Detailed programming scheme, array level implementation, and controller architecture are also proposed. Furthermore, to study the impact of proposed SLIM approach for real-world implementations, we performed analysis for two applications: (i) Sobel Edge Detection, and (ii) Binary Neural Network- Multi layer Perceptron (BNN-MLP). By performing all computations in SLIM bitcell array, huge Energy Delay Product (EDP) savings of approximate to 75x for 1T-1R (approximate to 40x for 2T-1R) SLIM bitcell were observed for edge-detection application while EDP savings of approximate to 3.5x for 1T-1R (approximate to 1.6x for 2T-1R) SLIM bitcell were observed for BNN-MLP application respectively, in comparison to conventional computing. EDP savings owing to reduction in data transfer between CPU <-> memory is observed to be approximate to 780x (for both SLIM bitcells).en_US
dc.language.isoen_USen_US
dc.titleSLIM: Simultaneous Logic-in-Memory Computing Exploiting Bilayer Analog OxRAM Devicesen_US
dc.typeArticleen_US
dc.identifier.doi10.1038/s41598-020-59121-0en_US
dc.identifier.journalSCIENTIFIC REPORTSen_US
dc.citation.volume10en_US
dc.citation.issue1en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000562888700001en_US
dc.citation.woscount0en_US
Appears in Collections:Articles