標題: Effects of synthetic antiferromagnetic coupling on back-hopping of spin-transfer torque devices
作者: Chen, Kuan-Ming
Cheng, Chih-Wei
Wei, Jeng-Hua
Hsin, Yu-Chen
Tseng, Yuan-Chieh
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 17-八月-2020
摘要: A synthetic antiferromagnetic (SAF) layer is a key component in spin-transfer torque magneto-resistive random-access memory devices. This study reveals that slight fluctuations in SAF coupling at the margin of the reference layer and hard layer (i.e., concurrent reversal) can lead to write errors in the form of back-hopping (BH). It appears that variable BH behavior can be attributed to competition between antiparallel (AP) -> parallel (P) and P -> AP transitions associated with SAF coupling. Our conclusions are supported by careful analysis of switching phase diagrams and measurements of self-heating and voltage-controlled magnetic anisotropy. We also observed that one form of coupling provided higher perpendicular magnetic anisotropic energy and thermal stability, which is likely due to the Dzyaloshinskii-Moriya interaction (DMI) effect. Thus, minimizing variations in DMI by optimizing SAF coupling is crucial for minimizing write error rates.
URI: http://dx.doi.org/10.1063/5.0011786
http://hdl.handle.net/11536/155485
ISSN: 0003-6951
DOI: 10.1063/5.0011786
期刊: APPLIED PHYSICS LETTERS
Volume: 117
Issue: 7
起始頁: 0
結束頁: 0
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