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dc.contributor.authorKumari, Nehaen_US
dc.contributor.authorYang, Shang-Hsienen_US
dc.contributor.authorChen, Ke-Horngen_US
dc.contributor.authorLin, Ying-Hsien_US
dc.contributor.authorLin, Shian-Ruen_US
dc.contributor.authorTsai, Tsung-Yenen_US
dc.date.accessioned2020-10-05T02:02:23Z-
dc.date.available2020-10-05T02:02:23Z-
dc.date.issued2019-01-01en_US
dc.identifier.isbn978-1-7281-5106-9en_US
dc.identifier.urihttp://hdl.handle.net/11536/155547-
dc.description.abstractIn this paper, the switched -capacitor boost (SCB) mode envelope tracking (ET) technique with a switched-capacitor circuit and a low dropout (LDO) regulator are used to replace conventional envelope tracking regulators. At a Peak-to-Average Power Ratio (PAPR) of 7.7dB common for LTE communication, the efficiency is 72%, which is 4% higher than the theoretical limit of conventional ET techniques. When PAPR increases from 6.1dB to 7.3dB, the conventional ET efficiency decreases from 82% to 69% whereas the SCB mode increases by 2%.en_US
dc.language.isoen_USen_US
dc.subjectenvelope trucking (ET)en_US
dc.subjectPeak-to-Average Power Ratio (PAPR)en_US
dc.subjectswitched-capacitor boost (SCB)en_US
dc.titleA CMOS Switched-Capacitor Boost Mode Envelope Tracking Regulator with 4% Efficiency Improvement at 7.7dB PAPR for 20MHz LTE Envelope Tracking RF Power Amplifiersen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2019 IEEE ASIAN SOLID-STATE CIRCUITS CONFERENCE (A-SSCC)en_US
dc.citation.spage255en_US
dc.citation.epage258en_US
dc.contributor.department電機工程學系zh_TW
dc.contributor.departmentDepartment of Electrical and Computer Engineeringen_US
dc.identifier.wosnumberWOS:000569524500073en_US
dc.citation.woscount0en_US
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