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dc.contributor.authorChiu, Kang-Lunen_US
dc.contributor.authorChan, Hsun-Weien_US
dc.contributor.authorLee, Wei-Cheen_US
dc.contributor.authorWu, Chang-Tingen_US
dc.contributor.authorLopez, Henryen_US
dc.contributor.authorLiu, Hung-Chihen_US
dc.contributor.authorHuang, Meng-Yuanen_US
dc.contributor.authorLiu, Chun-Yien_US
dc.contributor.authorLee, Tsai-Huaen_US
dc.contributor.authorChang, Hsin-Tingen_US
dc.contributor.authorJen, Chih-Weien_US
dc.contributor.authorChang, Nien-Hsiangen_US
dc.contributor.authorTsai, Pei-Yunen_US
dc.contributor.authorKuan, Yen-Chengen_US
dc.contributor.authorJou, Shyh-Jyeen_US
dc.date.accessioned2020-10-05T02:02:23Z-
dc.date.available2020-10-05T02:02:23Z-
dc.date.issued2019-01-01en_US
dc.identifier.isbn978-1-7281-5106-9en_US
dc.identifier.urihttp://hdl.handle.net/11536/155548-
dc.description.abstractIn this paper, we introduce a 10 Gbps digital baseband transceiver with IV supply voltage, 16-QAM, 3/4 code rate single carrier mode using 28 nm CMOS process to do the implementation. In millimeter wave communications, well-defined standard, IEEE 802.11ad is referenced for our system design and simulation. We target at modified chip rate 2.5 GHz with 4 times parallelism hardware at clock rate 625 MHz. The overall transceiver architecture design with hardware implementation considerations will be proposed. With the smart shared memory allocation, we can reduce 31% of the total amount. According to the referenced specifications, we achieve the required bit error rate 3 x 10(-7) before SNR 18.5 dB. After the system algorithm design, we implement the hardware with the core area 2.92 mm(2) with measured power 1.8 Watt for baseband transceiver chip. The performance of energ,y per bit is 0.023 nJ and 0.211 nJ per hit 6w Tx and Rx, including ADC/DAC.en_US
dc.language.isoen_USen_US
dc.subjectmmWaveen_US
dc.subjectSingle Carrier (SC)en_US
dc.subjectDigital Basebanden_US
dc.subjectIEEE 802.11ad/ayen_US
dc.titleA Millimeter Wave Digital CMOS Baseband Transceiver for Wireless LAN Applicationsen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2019 IEEE ASIAN SOLID-STATE CIRCUITS CONFERENCE (A-SSCC)en_US
dc.citation.spage275en_US
dc.citation.epage278en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.department國際半導體學院zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentInternational College of Semiconductor Technologyen_US
dc.identifier.wosnumberWOS:000569524500078en_US
dc.citation.woscount0en_US
Appears in Collections:Conferences Paper