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dc.contributor.authorChu, Wei-Chenen_US
dc.contributor.authorKu, Shin Anen_US
dc.contributor.authorWang, Harn Jiunnen_US
dc.contributor.authorLuo, Chih Weien_US
dc.contributor.authorAndreev, Yu. M.en_US
dc.contributor.authorLanskii, Grigoryen_US
dc.contributor.authorKobayashi, T.en_US
dc.date.accessioned2014-12-08T15:21:52Z-
dc.date.available2014-12-08T15:21:52Z-
dc.date.issued2012-03-01en_US
dc.identifier.issn0146-9592en_US
dc.identifier.urihttp://dx.doi.org/10.1364/OL.37.000945en_US
dc.identifier.urihttp://hdl.handle.net/11536/15567-
dc.description.abstractWe demonstrate the widely linear and broadband terahertz (THz) generation on GaSe:Te crystals by femtosecond laser pulses. It was found that the dopant, Te atoms, in GaSe crystals significantly enhances the efficiency of THz generation, and its central frequency can be tuned by varying the crystal thickness through non-phase-matched optical rectification. Moreover, the wide-ranging linearity for the optical-to-THz conversion and central-frequency-tunable THz generation promise for GaSe: Te crystals to be potential materials for high-power (> 1.36 mu W) THz applications. (C) 2012 Optical Society of Americaen_US
dc.language.isoen_USen_US
dc.titleWidely linear and non-phase-matched optical-to-terahertz conversion on GaSe:Te crystalsen_US
dc.typeArticleen_US
dc.identifier.doi10.1364/OL.37.000945en_US
dc.identifier.journalOPTICS LETTERSen_US
dc.citation.volume37en_US
dc.citation.issue5en_US
dc.citation.spage945en_US
dc.citation.epage947en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000301195100063-
dc.citation.woscount10-
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