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dc.contributor.authorLin, M. H.en_US
dc.contributor.authorHsieh, E. R.en_US
dc.contributor.authorChung, Steve S.en_US
dc.contributor.authorTsai, C. H.en_US
dc.contributor.authorLiu, P. W.en_US
dc.contributor.authorLin, Y. H.en_US
dc.contributor.authorTsai, C. T.en_US
dc.contributor.authorMa, G. H.en_US
dc.date.accessioned2014-12-08T15:22:00Z-
dc.date.available2014-12-08T15:22:00Z-
dc.date.issued2009en_US
dc.identifier.isbn978-4-86348-009-4en_US
dc.identifier.urihttp://hdl.handle.net/11536/15631-
dc.description.abstractIn this paper, the hot-carrier induced oxide trap and its correlation with enhanced degradation in strained CMOS devices have been reported for the first time. First, the I(D)-RTN (Drain Current Random Telegraph Noise) has been employed to study the HC stress induced slow oxide traps in strained nMOSFETs and pMOSFETs. Secondly, different behavior of the slow traps in nMOSFET and pMOSFET has been observed. Results show that the vertical compressive strain generates extra oxide defects and induces more scattering after the HC stress in CESL nMOSFET. This vertical strain in CESL, also contributes to a non-negligible amount of extra device degradation. While, SiGe S/D pMOSFET shows different behavior in that the compressive strain in this structure shows no impact on its reliability.en_US
dc.language.isoen_USen_US
dc.subjectStrained-Si devicesen_US
dc.subjectRandom Telegraph Noiseen_US
dc.subjectSlow trapen_US
dc.titleA New Observation of Strain-Induced Slow Traps in Advanced CMOS Technology with Process-Induced Strain Using Random Telegraph Noise Measurementen_US
dc.typeArticleen_US
dc.identifier.journal2009 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERSen_US
dc.citation.spage52en_US
dc.citation.epage53en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000275651200019-
Appears in Collections:Conferences Paper