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dc.contributor.authorChen, Y. F.en_US
dc.contributor.authorLiang, H. C.en_US
dc.contributor.authorTung, J. C.en_US
dc.contributor.authorSu, K. W.en_US
dc.contributor.authorZhang, Y. Y.en_US
dc.contributor.authorZhang, H. J.en_US
dc.contributor.authorYu, H. H.en_US
dc.contributor.authorWang, J. Y.en_US
dc.date.accessioned2014-12-08T15:22:01Z-
dc.date.available2014-12-08T15:22:01Z-
dc.date.issued2012-02-15en_US
dc.identifier.issn0146-9592en_US
dc.identifier.urihttp://dx.doi.org/10.1364/OL.37.000461en_US
dc.identifier.urihttp://hdl.handle.net/11536/15633-
dc.description.abstractWe explore the operation of spontaneous mode locking in a diode-pumped Nd:SrGdGa3O7 disordered crystal laser. The first- and second-order autocorrelations are simultaneously performed to evaluate the temporal characteristics. An 80 GHz pulse train with a pulse duration as short as 616 fs is observed. The maximum output power is 415 mW at a pump power of 6.1 W. (C) 2012 Optical Society of Americaen_US
dc.language.isoen_USen_US
dc.titleSpontaneous subpicosecond pulse formation with pulse repetition rate of 80 GHz in a diode-pumped Nd:SrGdGa3O7 disordered crystal laseren_US
dc.typeArticleen_US
dc.identifier.doi10.1364/OL.37.000461en_US
dc.identifier.journalOPTICS LETTERSen_US
dc.citation.volume37en_US
dc.citation.issue4en_US
dc.citation.spage461en_US
dc.citation.epage463en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000300706500006-
dc.citation.woscount11-
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